2SB827 datasheet(1/4 Pages) ISC

No. de pieza	2SB827

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	4 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB827

·

DESCRIPTION

・

With TO-3PN package

・

Complement to type 2SD1063

・

Wide area of safe operation

・

Low collector-emitter saturation voltage :

VCE(sat)=(–)0.4V max.

APPLICATIONS

・

Universal high current switching as solenoid

driving,high speed inverter and converter.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-60

V

VCEO

Collector-emitter voltage

Open base

-50

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current (DC)

-7

A

ICP

Collector current (Pulse)

-14

A

PC

Collector power dissipation

TC=25℃

60

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3PN) and symbol

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2SB827 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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