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2SB849 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB849 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB849 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(BR) Collector-emitter breakdown voltage IC=-10mA ;IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 200 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 340 pF fT Transition frequency IC=-0.2A ; VCE=-5V 14 MHz |
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