2SB859 datasheet(1/4 Pages) ISC

No. de pieza	2SB859

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	4 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB859

DESCRIPTION

・

・With TO-220C package

・Complement to type 2SD1135

APPLICATIONS

・Low frequency power amplifier

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-100

V

VCEO

Collector-emitter voltage

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-4

A

ICP

Collector current-Peak

-8

A

PC

Collector power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-45~150

℃

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2SB859 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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