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2SB944 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB944 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB944 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A B -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A B -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.1A; VCE= -2V 45 hFE-2 DC Current Gain IC= -1A; VCE= -2V 60 260 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V; f= 10MHz 30 MHz Switching times ton Turn-on Time 0.15 μs tstg Storage Time 0.8 μs tf Fall Time IC= -1A ; IB1= -IB2= -0.1A 0.15 μs hFE-2 classifications Q P 90-180 130-260 isc Website:www.iscsemi.cn 2 |
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