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2SB954 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB954
Descripción Electrónicos  Silicon PNP Power Transistors
PDF  4 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB954 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB954 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB954 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SB954 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SB954 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2SB954 2SB954A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SB954
-60
VCEO
Collector-emitter
voltage
2SB954A
IC=-30mA ;IB=0
-80
V
VCEsat
Collector-emitter saturation voltage
IC=-1.0A ;IB=-0.125A
-1.0
V
VBE
Base-emitter voltage
IC=-1A ; VCE=-4V
-1.3
V
2SB954
VCE=-30V; IB=0
ICEO
Collector
cut-off current
2SB954A
VCE=-60V; IB=0
-300
μA
2SB954
VCE=-60V; VBE=0
ICES
Collector
cut-off current
2SB954A
VCE=-80V; VBE=0
-200
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
mA
hFE-1
DC current gain
IC=-0.2A ; VCE=-4V
70
250
hFE-2
DC current gain
IC=-1A ; VCE=-4V
15
fT
Transition frequency
IC=-0.2A; VCE=-5V,f=10MHz
30
MHz
ton
Trun-on time
0.5
μs
ts
Storage time
1.2
μs
tf
Fall time
IC=-1A ;VCC=-50V
IB1=-0.1A, IB2=0.1A
0.3
μs
hFE-1 Classifications
Q
P
70-150
120-250



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