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2SB975 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB975 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB975 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -3A, IB= -3mA B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A, IB= -3mA B -2.0 V ICBO Collector Cutoff Current VCB= -100V, IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -5 mA hFE-1 DC Current Gain IC= -3A; VCE= -2V 2000 15000 hFE-2 DC Current Gain IC= -5A; VCE= -2V 500 Switching times ton Turn-on Time 0.5 μs tstg Storage Time 1.0 μs tf Fall Time RL= 16.7Ω, VCC≈ -50V IC= -3A; IB1= -IB2= -3mA 1.0 μs hFE-1 Classifications M L K 2000-5000 3000-7000 5000-15000 isc Website:www.iscsemi.cn |
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