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SW3205 Datasheet(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

No. de pieza SW3205
Descripción Electrónicos  N-channel MOSFET
PDF  7 Pages
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Fabricante Electrónico  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Página de inicio  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW3205 Datasheet(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area (TO-220)
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
،ط Notes :
1. V
GS
= 10 V
2. I
D
= 55 A
T
J
, Junction Temperature [
oC]
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
،ط Notes :
1. T
C
= 25
oC
2. T
J
= 175
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
175
0
20
40
60
80
100
120
T
C'
Case Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
،ط Notes :
1. Z
¥èJC
(t) = 0.75
oC/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
SW3205
SAMWIN
4/7



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