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2SB980 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB980
Descripción Electrónicos  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB980 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB980
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICP
Collector Current-Pulse
-10
A
Collector Power Dissipation
@ TC=25℃
70
PC
Collector Power Dissipation
@ Ta=25℃
3
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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