Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Features

■ High ruggedness

■ R

■ Gate Charge (Max 6nC)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics. This power MOSFET is usually used at high efficient DC to DC

converter block and switch mode power supply.

N-channel MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-126

TO-251

TO-252

V

DSS

Drain to Source Voltage

600

V

I

D

Continuous Drain Current (@T

1.0

1.0

A

Continuous Drain Current (@T

0.65

0.65

A

I

DM

Drain current pulsed

(note 1)

4.0

4.0

A

V

GS

Gate to Source Voltage

± 30

V

E

AS

Single pulsed Avalanche Energy

(note 2)

52

mJ

E

AR

Repetitive Avalanche Energy

(note 1)

0.3

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

4.5

V/ns

P

D

Total power dissipation (@T

30

30

W

0.23

0.23

T

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

T

L

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Maximum Value

Unit

TO-126

TO-251

TO-252

R

thjC

Thermal resistance, Junction to case

4.2

R

thCS

Thermal resistance, Junction to case

50

R

thjA

Thermal resistance, Junction to ambient

110

Mar. 2011. Rev. 2.0

1/7

BV

I

D

: 1.0A

R

1

2

3

1 2

3

1. Gate 2. Drain 3. Source

TO-251

1

2

3

TO-252

TO-126

1

2

3

SW1N60

SAMWIN

Item

Sales Type

Marking

Package

Packaging

1

SW L 1N60

SW1N60

TO-126

TUBE

2

SW I 1N60

SW1N60

TO-251

TUBE

3

SW D 1N60

SW1N60

TO-252

REEL

Order Codes