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SW1N60A Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW1N60A Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 7 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Features ■ High ruggedness ■ R DS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. N-channel MOSFET Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to Source Voltage 600 V I D Continuous Drain Current (@T C=25 oC) 0.5 A Continuous Drain Current (@T C=100 oC) 0.3 A I DM Drain current pulsed (note 1) 2.0 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) 52 mJ E AR Repetitive Avalanche Energy (note 1) 0.3 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns P D Total power dissipation (@T C=25 oC) 3 W Derating Factor above 25oC 0.023 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 260 oC Thermal characteristics Symbol Parameter Value Unit R thCS Thermal resistance, Junction to Lead Max 40 oC/W R thjA Thermal resistance, Junction to ambient 120 oC/W Mar. 2011. Rev. 2.0 1/7 BV DSS : 600V I D : 0.5A R DS(ON) : 15ohm 1 2 3 SW1N60A SAMWIN 1. Gate 2. Drain 3. Source 1 2 3 TO-92 Item Sales Type Marking Package Packaging 1 SW C 1N60A SW1N60A TO-92 TAPE Order Codes |
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