2SB1135 datasheet(1/4 Pages) ISC

No. de pieza	2SB1135

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	4 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1135

DESCRIPTION

・With TO-220F package

・Complement to type 2SD1668

・Low collector saturation voltage

・Wide ASO

APPLICATIONS

・Relay drivers

・High speed inverters;converters

・General high current switching application

PINNING

DESCRIPTION

1

Emitter

2

Collector

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

VCBO

Collector-base voltage

Open emitter

-60

V

VCEO

Collector-emitter voltage

Open base

-50

V

VEBO

Emitter-base voltage

Open collector

-6

V

IC

Collector current

-7

A

ICM

Collector current-peak

-12

A

IB

Base current

-0.5

A

Ta=25℃

2

PC

Collector dissipation

TC=25℃

30

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-220F) and symbol

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2SB1135 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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