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2SB1503 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB1503
Descripción Electrónicos  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1503 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB1503
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -7A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -7A
·Complement to Type 2SD2276
APPLICATIONS
·Designed for power amplifier applications
·Optimum for 110W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-12
A
Collector Power Dissipation
@ TC=25℃
120
PC
Collector Power Dissipation
@ Ta=25℃
3.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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