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2SB1647 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1647 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Darlington Power Transistors 2SB1647 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-10mA -2.5 V VBEsat Base-emitter saturation voltage IC=-10A ;IB=-10mA -3.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-10A ; VCE=-4V 5000 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 320 pF fT Transition frequency IC=-2A ; VCE=-12V 45 MHz Switching times ton Turn-on time 0.7 μs ts Storage time 1.6 μs tf Fall time IC=-10A;RL=4Ω IB1=- IB2=-10mA VCC=-40V 1.1 μs hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 |
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