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2SB1658 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB1658
Descripción Electrónicos  Silicon PNP Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1658 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1658
DESCRIPTION
・
・With TO-126 package
・Low collector saturation voltage
・High DC current gain
APPLICATIONS
・For audio frequency amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-30
V
VCEO
Collector-emitter voltage
Open base
-30
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-5
A
ICM
Collector current-Peak
-10
A
IB
Base current (DC)
-2
A
Ta=25℃
0.1
PT
Total power dissipation
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃


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