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C1969 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza C1969
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

C1969 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC1969
DESCRIPTION
·High Power Gain-
: Gpe≥12dB,f= 27MHz, PO= 16W
·High Reliability
APPLICATIONS
·Designed for 10~14 watts output power class AB amplifiers
applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage RBE= ∞
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
6
A
Collector Power Dissipation
@TC=25℃
20
PC
Collector Power Dissipation
@Ta=25℃
1.7
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
Thermal Resistance,Junction to Ambient
73.5
℃/W
Rth j-c
Thermal Resistance,Junction to Case
6.25
℃/W
isc Website：www.iscsemi.cn


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