2SC2497 datasheet(1/3 Pages) ISC

No. de pieza	2SC2497

Descripción Electrónicos	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2497 2SC2497A

DESCRIPTION

・

・With TO-126 package

・Complement to type 2SA1096/A

・High collector to emitter voltage VCEO

APPLICATIONS

・For low-frequency power amplification

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

70

V

2SC2497

50

VCEO

Collector- emitter voltage

2SC2497A

Open base

60

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

1.5

A

ICM

Collector current-peak

3

A

1.2*

1

PD

Total power dissipation

TC=25℃

5*

2

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55～+150

℃

Note) *1: Without heat sink

*2: With a 100 × 100 × 2 mm A1 heat sink

Número de pieza similar - 2SC2497

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Panasonic Semiconductor	2SC2497	70Kb / 4P	Silicon NPN epitaxial planar type(For low-frequency power amplification) 2001 MAR
Savantic, Inc.	2SC2497	106Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	2SC2497	107Kb / 3P	Silicon NPN Power Transistors
Panasonic Semiconductor	2SC2497A	70Kb / 4P	Silicon NPN epitaxial planar type(For low-frequency power amplification) 2001 MAR
Savantic, Inc.	2SC2497A	106Kb / 3P	Silicon NPN Power Transistors

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2SC2497 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2SC2497 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

Número de pieza similar - 2SC2497

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