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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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2SC3720 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3720 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3720 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc Website：www.iscsemi.cn |
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