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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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C3751 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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C3751 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3751 DESCRIPTION ·High Breakdown Voltage and High Reliability ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 5 A IB Base Current-Continuous 0.8 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn |
Número de pieza similar - C3751 |
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Descripción similar - C3751 |
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