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2SC4940 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4940 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4940 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 550 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current ICEO Collector cut-off current At rated volatge 0.1 mA IEBO Emitter cut-off current At rated volatge 0.1 mA hFE-1 DC current gain IC=2A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 10 fT Transition frequency IC=0.4A ; VCE=10V 10 MHz Switching times ton Turn-on time 0.8 μs ts Storage time 3.0 μs tf Fall time IC=2A;IB1=0.4A IB2=0.8A ,RL=75Ω VBB2=4V 0.3 μs |
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