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2SC5003 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC5003
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  4 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC5003 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC5003 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC5003 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC5003 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SC5003 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SC5003
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Base-emitter breakdown voltage
IEB=300mA; IB=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=5A;IB=1.2A
5
V
VBEsat
Base-emitter saturation voltage
IC=5A;IB=1.2A
1.5
V
ICBO1
Collector cut-off current
VCB=1200V; IE=0
100
μ
A
ICBO2
Collector cut-off current
VCB=1500V; IE=0
1
mA
ICEO
Collector cut-off current
VCE=800V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
μ
A
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=5A ; VCE=5V
4
9
VFEC
Forward voltage
IEC=7A
2.0
V
fT
Transition frequency
IE=-0.5A ; VCE=12V
4
MHz
COB
Output capacitance
VCB=10V;f=1MHz
100
pF
Switching times
tstg
Storage time
4.0
μ
s
tf
Fall time
IC=4A;IB1=0.8A;
IB2=-1.6A;RL=50Ω
VCC=200V
0.2
μ
s



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