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2SC5196 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5196 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V ; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 35 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 75 pF fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 30 MHz hFE-1 Classifications R O 55-110 80-160 isc Website:www.iscsemi.cn 2 |
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