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2SD717 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD717 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD717 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0 50 V VCEsat Collector-emitter saturation voltage IC=6A; IB=0.3A 0.4 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.3A 1.2 V ICBO Collector cut-off current VCB=70V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=1V 70 240 hFE-2 DC current gain IC=6A ; VCE=1V 30 fT Transition frequency IC=1A ; VCE=4V 10 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 350 pF Switching times ton Turn-on time 0.3 μs ts Storage time 2.5 μs tf Fall time IB1=-IB2=0.3A;RL=5Ω;VCC=30V 0.4 μs hFE-1 Classifications O Y 70-140 120-240 |
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