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2SD907 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD907 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD907 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE DC Current Gain IC= 2A; VCE= 5V 40 Switching times ton Turn-on Time 1.0 μs tstg Storage Time 2.0 μs tf Fall Time IC= 5A; IB1= -IB2= 0.5A RL= 5Ω; PW=20μs; Duty Cycle≤2% 1.0 μs isc Website:www.iscsemi.cn 2 |
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