2SD1193 datasheet(1/3 Pages) ISC

No. de pieza	2SD1193

Descripción Electrónicos	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1193

DESCRIPTION

・With TO-3PN package

・Complement to type 2SB883

・High DC current gain

・High current capacity and wide ASO

・Low saturation voltage

APPLICATIONS

・Motor drivers, printer hammer drivers,

relay drivers,voltage regulator control.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

VCBO

Collector-base voltage

Open emitter

70

V

VCEO

Collector-emitter voltage

Open base

60

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current (DC)

15

A

ICP

Collector current (Pulse)

20

A

PC

Collector power dissipation

TC=25℃

70

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3PN) and symbol

Número de pieza similar - 2SD1193

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Sanyo Semicon Device	2SD1193	113Kb / 4P	Driver Applications?????????
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2SD1193 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2SD1193 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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