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2SD1705 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD1705
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1705 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD1705 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD1705 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1705
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA; IB= 0
80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 6A; IB= 0.3A
B
0.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 1A
1.5
V
VBE(sat)-1
Base -Emitter Saturation Voltage
IC= 6A; IB= 0.3A
B
1.5
V
VBE(sat)-2
Base -Emitter Saturation Voltage
IC= 10A; IB= 1A
2.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 2V
45
hFE-2
DC Current Gain
IC= 3A; VCE= 2V
90
260
hFE-3
DC Current Gain
IC= 6A; VCE= 2V
30
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
20
MHz
Switching Times
ton
Turn-on Time
0.5
μs
tstg
Storage Time
2.0
μs
tf
Fall Time
IC= 6A, IB1= -IB2= 0.6A;
VCC= 50V
0.2
μs
hFE-2Classifications
Q
P
90-180
130-260
isc Website：www.iscsemi.cn
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