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2SD1791 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD1791
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1791 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1791
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V (Min.)
·High Switching Speed
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
100
V
VCBO
Collector-Base Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continunous
7
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current-Continunous
0.5
A
IBM
Base Current-Peak
1.0
A
PC
Collector Power Dissipation
@TC=25℃
30
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
4.17
℃/W
isc Website：www.iscsemi.cn


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