2SD1928 datasheet(1/2 Pages) ISC

No. de pieza	2SD1928

Descripción Electrónicos	isc Silicon NPN Darlington Power Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD1928

DESCRIPTION

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max) @IC= 4A

·High DC Current Gain

: hFE= 2000(Min) @ IC= 4A

APPLICATIONS

·Designed for audio frequency power amplifier and low

speed switching industrial use.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

8

A

ICP

Collector Current-Pulse

12

A

IB

B

Base Current-Continuous

0.8

A

Collector Power Dissipation

@ Ta=25℃

2

PC

Collector Power Dissipation

@ TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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2SD1928 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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