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BD905 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BD905
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD905 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD905
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 45V(Min)
·Complement to Type BD906
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
B
Base Current
5
A
PC
Collector Power Dissipation
@ TC=25℃
90
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.38
℃/W
isc Website：www.iscsemi.cn


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