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BDW83D Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BDW83D
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW83D Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BDW83D Datasheet HTML 1Page - Inchange Semiconductor Company Limited BDW83D Datasheet HTML 2Page - Inchange Semiconductor Company Limited BDW83D Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BDW83/83A/83B/83C/83D
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW83
45
BDW83A
60
BDW83B
80
BDW83C
100
V(BR)CEO
Collector-emitter
breakdown voltage
BDW83D
IC=30mA, IB=0
120
V
VCEsat-1
Collector-emitter saturation voltage
IC=6A ,IB=12mA
2.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A ,IB=150mA
4.0
V
VBE
Base-emitter on voltage
IC=6A ; VCE=3V
2.5
V
BDW83
VCB=45V, IE=0
TC=150℃
0.5
5.0
BDW83A
VCB=60V, IE=0
TC=150℃
0.5
5.0
BDW83B
VCB=80V, IE=0
TC=150℃
0.5
5.0
BDW83C
VCB=100V, IE=0
TC=150℃
0.5
5.0
ICBO
Collector
cut-off current
BDW83D
VCB=120V, IE=0
TC=150℃
0.5
5.0
mA
BDW83
VCE=30V, IB=0
BDW83A
VCE=30V, IB=0
BDW83B
VCE=40V, IB=0
BDW83C
VCE=50V, IB=0
ICEO
Collector
cut-off current
BDW83D
VCE=60V, IB=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2
mA
hFE-1
DC current gain
IC=6A ; VCE=3V
750
20000
hFE-2
DC current gain
IC=15A ; VCE=3V
100
VEC
Diode forward voltage
IE=15A
3.5
V
ton
Turn-on time
0.9
μs
toff
Turn-off time
IC = 10 A, IB1 =-IB2=40 mA
RL=3Ω; VBE(off) = -4.2V
Duty Cycle≤2%
7.0
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
0.83
℃/W



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