BUL45 datasheet(2/3 Pages) ISC

No. de pieza	BUL45

Descripción Electrónicos	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL45

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.1 A ;IB=0;L=25mH

400

VCEsat-1

Collector-emitter saturation voltage

IC=1A ;IB=0.2 A

0.175

0.25

VCEsat-2

Collector-emitter saturation voltage

IC=2A ;IB=0.4 A

0.25

0.4

VBEsat-1

Base-emitter saturation voltage

IC=1A ;IB=0.2 A

0.84

1.2

VBEsat-2

Base-emitter saturation voltage

IC=2A ;IB=0.4 A

0.89

1.25

ICEO

Collector cut-off current

VCE =RatedVCEO; IB=0;

100

μA

ICES

Collector cut-off current

VCE =RatedVCES; VEB=0;

TC=125℃

100

μA

IEBO

Emitter cut-off current

VEB=9V; IC=0

0.1

hFE-1

DC current gain

IC=0.3A;VCE=5V

hFE-2

DC current gain

IC=2A;VCE=1V

hFE-3

DC current gain

IC=10mA;VCE=5V

COB

Output capacitance

IE=0; VCB=10V;f=1MHz

Transition frequency

IC=0.5 A ; VCE=10V

MHz

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