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MJE180 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza MJE180
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE180 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJE180
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; IB= 0
40
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 0.5 A ;IB= 50mA
0.3
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 1.5A ;IB= 0.15 A
B
0.9
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 3A ;IB= 0.6 A
1.7
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.15A
1.5
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
B
2.0
V
VBE(on)
Base-Emitter On Voltage
VCE= 1V; IC= 0.5A
1.2
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
VCB= 60V; IE= 0;TC= 150℃
0.1
0.1
μA
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
0.1
μA
hFE-1
DC Current Gain
IC= 0.1 A ; VCE= 1V
50
250
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 1V
30
hFE-3
DC Current Gain
IC= 1.5 A ; VCE= 1V
12
fT
Current-Gain—Bandwidth Product
IC= 0.1 A; VCE= 10V;
50
MHz
COB
Collector Capacitance
IE= 0; VCB= 10V; ftest = 0.1MHz
40
pF
isc Website：www.iscsemi.cn



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