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MJE15032 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE15032 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors MJE15032 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 B 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A 0.5 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V 50 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 50 hFE-3 DC Current Gain IC= 2A ; VCE= 5V 10 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; ftest= 1.0MHz 30 MHz isc Website:www.iscsemi.cn |
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