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PMD17K80 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza PMD17K80
Descripción Electrónicos  isc Silicon PNP Darlingtion Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

PMD17K80 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  PMD17K80 Datasheet HTML 1Page - Inchange Semiconductor Company Limited PMD17K80 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
PMD17K80
DESCRIPTION
·High DC current gain
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -80V(Min)
·Complement to type PMD16K80
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current -Continuous
-20
A
ICP
Collector Current-Peak
-40
A
IB
B
Base Current
-0.5
A
PC
Collector Power Dissipation@TC=25℃
200
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
ThermalResistance, Junction to Case
0.875
℃/W
isc Website：www.iscsemi.cn


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