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TSA1765CWRP Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSA1765CWRP Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page  TSA1765 High Voltage PNP Epitaxial Planar Transistor 1/4 Version: B11 SOT-223 PRODUCT SUMMARY BVCBO -600V BVCEO -560V IC -150mA VCE(SAT) -0.5V @ IC / IB = -50mA / -10mA Features ● Low Saturation Voltages ● High Breakdown Voltage Ordering Information Part No. Package Packing TSA1765CW RP SOT-223 2.5Kpcs / 13” Reel Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -600 V Collector-Emitter Voltage VCEO -560 V Emitter-Base Voltage VEBO -7 V Collector Current IC -150 mA Collector Current(Pulse) ICP -500 Base Current IB -50 Total Power Dissipation @ TC=25ºC Ptot 2 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -1mA, IE = 0 BVCBO -600 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -560 -- -- V Emitter-Base Breakdown Voltage IE = -10uA, IC = 0 BVEBO -7 -- -- V Collector Cutoff Current VCB = -600V, IE = 0 ICBO -- -- -100 nA Emitter Cutoff Current VEB = -7V, IC = 0 IEBO -- -- -100 nA Collector-Emitter Saturation Voltage IC = -20mA, IB = -2mA VCE(SAT) 1 -- -- -0.2 V IC = -50mA, IB = -10mA VCE(SAT) 2 -- -- -0.5 Base-Emitter Saturation Voltage IC = -50mA, IB = -10mA VBE(SAT) 1 -- -- -1.0 V Base-Emitter on Voltage VCE = -10V, IC = -50mA VBE(ON) -- -- -1.0 V DC Current Transfer Ratio VCE = -10V, IC = -1mA hFE 1 150 -- -- VCE = -10V, IC = -50mA hFE 2 80 -- 300 VCE = -10V, IC = -100mA hFE 3 -- 15-- -- Transition Frequency VCE = -20V, IE=-10mA fT 50 -- -- MHz Output Capacitance VCB = -20V, f=1MHz Cob -- -- 8 pF Pin Definition: 1. Base 2. Collector 3. Emitter |
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