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LL4448 Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza LL4448
Descripción Electrónicos  Small Signal Fast Switching Diodes
PDF  4 Pages
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

LL4448 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 85557
Rev. 1.9, 01-Sep-10
LL4148, LL4448
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 5 mA
LL4448
VF
620
720
mV
IF = 50 mA
LL4148
VF
860
1000
mV
IF = 100 mA
LL4448
VF
930
1000
mV
Reverse current
VR = 20 V
IR
25
nA
VR = 20 V, Tj = 150 °C
IR
50
µA
VR = 75 V
IR
5µA
Breakdown voltage
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
100
V
Diode capacitance
VR = 0, f = 1 MHz, VHF = 50 mV
CD
4pF
Reverse recovery time
IF = IR = 10 mA,
iR = 1 mA
trr
8ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr
4ns
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Forward Current vs. Forward Voltage
00.4
0.8
1.2
1.6
0.1
1
10
100
1000
VF - Forward Voltage (V)
2.0
94 9096
LL4148
Scattering Limit
Tj = 25 °C
94 9097
Tj =25
°C
LL4448
Scattering Limit
00.4
0.8
1.2
1.6
0.1
1
10
100
1000
VF - Forward Voltage (V)
2.0
Figure 3. Reverse Current vs. Reverse Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
1
10
100
1000
V
R- Reverse Voltage (V)
10
1
100
94 9098
T
j = 25 °C
Scattering Limit
0.1
1
10
0
0.5
1.0
1.5
2.0
3.0
100
94 9099
2.5
V
R - Reverse Voltage (V)
f = 1 MHz
T
j = 25 °C



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