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BSM15GD60DN2 Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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BSM15GD60DN2 Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
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7 / 9 page ![]() Semiconductor Group 7 Jan-09-1997 BSM 15 GD 60 DN2 Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 68 Ω 0 5 10 15 20 25 30 A 40 I C 1 10 2 10 3 10 ns t tdon tr tdoff tf Typ. switching time t = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, IC = 15 A 0 20 40 60 80 100 120 140 160 Ω 200 R G 1 10 2 10 3 10 ns t tdon tr tdoff tf Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 68 Ω 0 5 10 15 20 25 30 A 40 I C 0.0 0.5 1.0 1.5 2.0 mWs 3.0 E Eon Eoff Typ. switching losses E = f (RG) , inductive load , Tj = 125°C par.: VCE = 300V, VGE = ± 15 V, IC = 15 A 0 20 40 60 80 100 120 140 160 Ω 200 R G 0.0 0.5 1.0 1.5 2.0 mWs 3.0 E Eon Eoff |
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