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BSM181F Datasheet(PDF) 2 Page - Siemens Semiconductor Group

No. de pieza BSM181F
Descripción Electrónicos  SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)
PDF  7 Pages
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Fabricante Electrónico  SIEMENS [Siemens Semiconductor Group]
Página de inicio  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BSM181F Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
65
BSM 181 F
Electrical Characteristics
at
T
j = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS = 0, ID = 0.25 mA
V
(BR)DSS
800
–
–
V
Gate threshold voltage
V
GS = VDS, ID = 1 mA
V
GS(th)
2.1
3.0
4.0
Zero gate voltage drain current
V
DS = 800 V, VGS = 0
T
j = 25 ˚C
T
j = 125 ˚C
I
DSS
–
–
20
300
250
1000
µA
Gate-source leakage current
V
GS = 20 V, VDS = 0
I
GSS
–
10
100
nA
Drain-source on-state resistance
V
GS = 10 V, ID = 21 A
R
DS(on)
–
0.25
0.32
Ω
Dynamic Characteristics
Forward transconductance
V
DS ≥ 2 × ID × RDS(on)max., ID = 21 A
g
fs
15
35
–
S
Input capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
iiss
–22
30
nF
Output capacitance
V
GS = 0, VDS = 25 V,
f = 1 MHz
C
oss
–
1
1.5
Reverse transfer capacitance
V
GS = 0, VDS = 25 V, f = 1 MHz
C
rss
–
0.48
0.8
Turn-on time
t
on (ton = td (on) + tr)
V
CC = 400 V, VGS = 10 V
I
D = 21 A, RGS = 3.3 Ω
t
d (on)
–60
–
ns
t
r
–90
–
Turn-off time
t
off (toff = td (off) + tf)
V
CC = 400 V, VGS = 10 V
I
D = 21 A, RGS = 3.3 Ω
t
d (off)
–
350
–
t
f
–70
–



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