TO-220

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

100

V

Collector-Emitter Voltage

V

CEO

100

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current

I

C

5.0

A

Base Current

I

B

0.1

A

Total Dissipation at

P

tot

65

W

Max. Operating Junction Temperature

T

j

150

Storage Temperature

T

stg

-55~150

TIP122 / TIP127

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

V

0.5

mA

Emitter Cut-off Current

V

2.0

mA

Collector-Emitter Sustaining Voltage

I

100

V

DC Current Gain

V

1000

V

1000

Collector-Emitter Saturation Voltage

I

2

V

I

4

Base-Emitter Saturation Voltage

2.5

V

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Product specification

The TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington

configuration mounted in Jedec TO-220 plastic package. They are intented for use in power

linear and switching applications.The complementary PNP types are TIP127 respectively.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

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