MMBT3906-AE3-R datasheet(2/3 Pages) UTC

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MMBT3906

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-013.D

ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Base Voltage

VCBO

-40

Collector Emitter Voltage

VCEO

-40

Emitter Base Voltage

VEBO

-5

Collector Current

-200

Base Current

-50

Collector Dissipation

350

Junction Temperature

150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Cut-off Current

ICEX

VCE=-30V, VEB=-3V

-50

Base Cut-off Current

IBL

VCE=-30V, VEB=-3V

-50

Collector-Base Breakdown Voltage

VCBO

IC=-10μA,IE=0

-40

Collector-Emitter Breakdown Voltage

(Note)

VCEO

IC=-1mA, IB=0

-40

Emitter-Base Breakdown Voltage

VEBO

IE=-10μA, IC=0

-6

hFE1

VCE=-1V, IC=-0.1mA

hFE2

VCE=-1V, IC=-1mA

hFE3

VCE=-1V, IC=-10mA

100

300

hFE4

VCE=-1V, IC=-50mA

DC Current Gain (Note)

hFE5

VCE=-1V, IC=-100mA

VCE(SAT)1 IC=-10mA, IB=-1mA

-0.25

Collector-Emitter Saturation Voltage (Note)

VCE(SAT)2IC=-50mA, IB=-5mA

-0.4

VBE(SAT)1 IC=-10mA, IB=-1mA

-0.65

-0.85

Base-Emitter Saturation Voltage

VBE(SAT)2IC=-50mA, IB=-5mA

-0.95

Transition Voltage

VCE=-20V, IC=-10mA, f=100MHz 250

MHz

Output Capacitance

Cob

VCB=-5V,IE=0, f=1MHz

4.5

Turn on Time

tON

VCC=-3V, VBE=-0.5V, IC=-10mA,

IB1=-1mA

Turn off Time

tOFF

IB1=1B2=-1mA

300

Note: Pulse test: PW≦300

μs, Duty Cycle≦2%

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