UT3N01ZG-AN3-R datasheet(1/4 Pages) UTC

No. de pieza	UT3N01ZG-AN3-R

Descripción Electrónicos	N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT3N01Z

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-285.A

N CHANNEL SILICON MOSFET

GENERAL-PURPOSE SWITCHING

DEVICE APPLICATIONS

DESCRIPTION

The UT3N01Z uses UTC advanced technology to provide excellent

RDS(ON), low gate charge and operation with low gate voltages. This

device’s general purpose is for switching device applications.

FEATURES

* RDS(ON) = 3.7Ω @VGS = 4 V

* Ultra low gate charge ( typical 1.58 nC )

* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

* Halogen-Free

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UT3N01ZG-AL3-R

SOT-323

S

G

D

Tape Reel

UT3N01ZG-AN3-R

SOT-523

S

G

D

Tape Reel

MARKING

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UT3N01ZG-AN3-R Datasheet(PDF) 1 Page - Unisonic Technologies

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