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UT70P03L-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UT70P03L-TN3-R
Descripción Electrónicos  75A, 30V P-CHANNEL POWER MOSFET
PDF  5 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT70P03L-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UT70P03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-210.F
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current , VGS=4.5V
TC=25°C
ID
-75
A
Pulsed Drain Current(Note 2)
IDM
-350
A
TO-220
147
TO-220F
37
Power Dissipation (TC=25°C)
TO-251/ TO-252
PD
107
W
Junction Temperature
TJ
+175
°C
Strong Temperature
TSTG
-55 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
TO-220/TO-220F
62.5
Junction to Ambient
TO-251/ TO-252
θJA
110
°C/W
TO-220
0.85
TO-220F
3.4
Junction to Case
TO-251/ TO-252
θJC
1.4
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 µA
-30
V
Breakdown Voltage Temperature
Coefficient
J
DSS
T
Δ
BV
Δ
Reference to 25°C, ID=-1mA
-0.018
V/°C
Drain-Source Leakage Current
IDSS
VDS = -30 V, VGS =0 V, TJ =25°C
-1
µA
Gate-Body Leakage Current
IGSS
VGS = ±20 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-1
-3
V
VGS =-10 V, ID =-45 A
8
mΩ
Static Drain-Source On-Resistance
(Note 2)
RDS(ON)
VGS =-4.5 V, ID =-30 A
10
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
2700
4200
pF
Output Capacitance
COSS
550
pF
Reverse Transfer Capacitance
CRSS
VDS =-25 V, VGS =0 V, f=1.0MHz
380
pF
SWITCHING PARAMETERS
Total Gate Charge(Note 2)
QG
33
52
nC
Gate Source Charge
QGS
7.5
nC
Gate Drain ("Miller") Charge
QGD
VDS =-24 V, VGS =-4.5 V,
ID =-30 A
24
nC
Turn-ON Delay Time(Note 2)
tD(ON)
11.2
ns
Turn-ON Rise Time
tR
77
ns
Turn-OFF Delay Time
tD(OFF)
35
ns
Turn-OFF Fall-Time
tF
VGS=-10V,VDS=-15V, RD=0.5 Ω,
ID =-30 A , RG =3.3 Ω
67
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage(Note 2)
VSD
IS=-45 A,VGS=0V
-1.3
V
Reverse Recovery Time
tRR
28
ns
Reverse Recovery Charge
QRR
IS=-30 A, VGS=0 V,
dI/dt=100 A/μs
10
nC
Notes: 1.Pulse width ≤ 300μs, duty cycle ≤ 2%.



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