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UT108N03G-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UT108N03G-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 3 page ![]() UT108N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 3 www.unisonic.com.tw QW-R502-197.H TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 0 Drain-Source Breakdown Voltage, BVDSS(V) 10 20 30 40 50 0 50 100 150 200 250 300 0.5 0 0 200 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) 1 1.5 2 2.5 400 600 800 1000 1200 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. |
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