UT2321L-AE3-R datasheet(1/4 Pages) UTC

No. de pieza	UT2321L-AE3-R

Descripción Electrónicos	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT2321

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-249.D

P-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UT2321 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* RDS(ON)<55mΩ @VGS=-4.5V

* RDS(ON)<80mΩ @VGS=-2.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT2321L-AE3-R

UT2321G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

231

L: Lead Free

G: Halogen Free

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UT2321L-AE3-R Datasheet(PDF) 1 Page - Unisonic Technologies

UT2321L-AE3-R Datasheet(HTML) 1 Page - Unisonic Technologies

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