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UT3419L-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza UT3419L-AE3-R
Descripción Electrónicos  20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
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UT3419L-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UT3419
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-391.C
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
-20
V
Gate to Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 1)
TA =25°C
ID
-3.5
A
TA =70°C
-2.8
A
Pulsed Drain Current (Note 2)
IDM
-15
A
Total Power Dissipation (Note 1)
TA =25°C
PD
1.4
W
TA =70°C
0.9
W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1)
t ≤ 10s
θJA
90
°C/W
Steady-State
125
°C/W
Note: 1. The value of θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any a given application depends on the user's specific board
design. The current rating is based on the t ≤ 10s thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=-250µA
-20
V
Drain-Source Leakage Current
IDSS
VDS=-16V,VGS=0V
-0.5
µA
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=±10V
±1
µA
VDS=0V ,VGS=±12V
±10
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS= VGS, ID=-250µA
-0.7
-0.9
-1.4
V
On State Drain Current
ID(ON)
VGS=-4.5V, VDS=-5V
-15
A
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V,ID=-3.5A
59
75
mΩ
VGS=-4.5V, ID=-3A
76
95
mΩ
VGS=-2.5V, ID=-1A
111
145
mΩ
Forward Transconductance
gFS
VDS=-5V, ID=-3.5A
6.8
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-10V,VGS=0V,f =1MHz
512
620
pF
Output Capacitance
COSS
77
pF
Reverse Transfer Capacitance
CRSS
62
pF
Gate Resistance
RG
VGS =0V, VDS =0V, f =1MHz
9.2
13
Ω
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=-10V,VGS=-4.5V,ID=-3.5A
5.5
6.6
nC
Gate-Source Charge
QGS
0.8
nC
Gate-Drain Charge
QGD
1.9
nC
Turn-ON Delay Time
tD(ON)
VDS=-10V,VGS=-10V,
RL=2.8Ω, RGEN=3Ω
5
ns
Turn-ON Rise Time
tR
6.7
ns
Turn-OFF Delay Time
tD(OFF)
28
ns
Turn-OFF Fall Time
tF
13.5
ns



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