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UTD3055G-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies |
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UTD3055G-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() UTD3055 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-460.a ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS (Note 2) QT 12.2 17 nC Q1 3.2 nC Q2 5.2 nC Gate Charge Q3 VGS=10V, VDS=48V, ID=12A 5.5 nC Turn-ON Delay Time tD(ON) 7.0 10 ns Rise Time tR 34 60 ns Turn-OFF Delay Time tD(OFF) 17 30 ns Fall-Time tF VDD=30V, VGS=10V, ID=12A, RG=9.1Ω 18 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS IS=12A, VGS=0V 1.0 1.6 Drain-Source Diode Forward Voltage (Note 1) VSD IS=12A, VGS=0V, TJ=150°C 0.91 V tRR 56 ns tA 40 ns Reverse Recovery Time tB 16 ns Reverse Recovery Charge QRR IS=12A, VGS=0V, dIs/dt=100A/µs 0.128 µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25’’ from package to center of die) LD 4.5 nH Internal Source Inductance (Measured from the source lead 0.25, from package to source bond pad) LS 7.5 nH Note: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. 2. Switching characteristics are independent of operating junction temperature. |
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