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UTT18P10G-TN3-R Datasheet(PDF) 3 Page - Unisonic Technologies

No. de pieza UTT18P10G-TN3-R
Descripción Electrónicos  100V, 19A P-CHANNEL POWER MOSFET
PDF  6 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT18P10G-TN3-R Datasheet(HTML) 3 Page - Unisonic Technologies

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UTT18P10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-619.a
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-100
V
Breakdown Voltage Temperature
Coefficient
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
-0.08
7
V/°C
VDS=-100V, VGS=0V,
-100
µA
Drain-Source Leakage Current
IDSS
VDS=-80V, VGS=0V, TJ=150°C
-500
µA
Forward
VGS=+20V
+100 nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-11A (Note 2)
0.20
Ω
Forward Transconductance
gFS
VDS=-50V, ID=-11A (Note 2)
6.2
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1400
pF
Output Capacitance
COSS
590
pF
Reverse Transfer Capacitance
CRSS
VDS=-25V, VGS=0V, f=1.0MHz
140
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
61
nC
Gate to Source Charge
QGS
14
nC
Gate to Drain ("Miller") Charge
QGD
VDS=-80V, VGS=-10V, ID=-19A,
See Fig 3 (Note 2)
29
nC
Turn-ON Delay Time
tD(ON)
16
ns
Rise Time
tR
73
ns
Turn-OFF Delay Time
tD(OFF)
34
ns
Fall-Time
tF
VDD=-50V, ID=-19A, RG=9.1Ω,
RD = 2.4Ω, See Fig. 1(Note 2)
57
ns
Internal Drain Inductance
LD
4.5
nH
Internal Source Inductance
LS
Between lead, 6
mm (0.25.) from
package and
center of die
contact
7.5
nH
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-19
A
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
MOSFET
symbol showing
the integral
reverse p-n
junction diode.
-72
A
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=-19A, VGS=0V
(Note 2)
-5.0
V
Body Diode Reverse Recovery Time
tRR
130 260
ns
Body Diode Reverse Recovery Charge
QRR
TJ=25°C, IF=-19A, di/dt=100A/µs
(Note 2)
0.35 0.70
µC
Forward Turn-On Time
tON
Intrinsic turn-on time is negligible (turn-on is dominated by
LS+LD)
Notes
:
1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.



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