CPC1998 datasheet(3/7 Pages) CLARE

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PRELIMINARY

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R01

CPC1998

Thermal Characteristics

2.1 Thermal Management

Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal interface

material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate junction-to-ambient

thermal resistance of 12.5°C/W.

2.2 Heat Sink Calculation

Higher load currents are possible by using lower thermal resistance heat sink combinations.

2.3 Thermal Performance Data

Parameter

Conditions

Symbol

Minimum

Typical

Maximum

Units

Thermal Resistance (Junction to Case)

RθJC

0.35

°C/W

Thermal Resistance (Junction to Ambient)

Free Air

RθJA

-33-

°C/W

Junction Temperature (Operating)

-40

125

°C

θCA =

- R

θJC

J - TA)

J = Junction Temperature (°C), TJ ≤ 125°C *

A = Ambient Temperature (°C)

θJC = Thermal Resistance, Junction to Case (°C/W) = 0.35°C/W

θCA = Thermal Resistance of Heat Sink & Thermal Interface Material , Case to Ambient (°C/W)

D = On-State Voltage (Vrms) • Load Current (Arms)

* Elevated junction temperature reduces semiconductor lifetime.

Heat Sink Rating

Load Current (A

rms)

Output Power

vs. Load Current

Temperature (ºC)

100

125

Output Power

vs. Ambient Temperature

Heat Sink

1ºC/W

2ºC/W

5ºC/W

10ºC/W

15ºC/W

Free Air

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