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2DB1188R Datasheet(PDF) 2 Page - Diodes Incorporated |
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2DB1188R Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page ![]() 2DB1188P/Q/R Document number: DS31144 Rev. 5 - 2 2 of 6 www.diodes.com November 2011 © Diodes Incorporated 2DB1188P/Q/R Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -2 A Peak Pulse Collector Current ICM -3 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 1 W Thermal Resistance, Junction to Ambient (Note 4) RθJA 125 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. Device mounted on 15mm X 15mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions |
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