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TLE4923 Datasheet(PDF) 5 Page - Siemens Semiconductor Group

No. de pieza TLE4923
Descripción Electrónicos  Dynamic Differential Hall Effect Sensor IC
PDF  18 Pages
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Fabricante Electrónico  SIEMENS [Siemens Semiconductor Group]
Página de inicio  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

TLE4923 Datasheet(HTML) 5 Page - Siemens Semiconductor Group

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TLE 4923
Semiconductor Group
5
1998-04-29
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Note: Unless otherwise noted, all temperatures refer to junction temperature.
In the operating range the functions given in the circuit description are fulfilled.
1)
Reverse current drawn by the device < 10 mA
2)
Can be reduced significantly by further packaging process, e. g. overmolding.
The device is ESD protected up to 2 kV (HL test procedure)
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
Supply voltage
V
S
– 18
1)
24
V
Capacitor voltage
V
C
– 0.3
3
V
Junction temperature
Junction temperature
Junction temperature
Junction temperature
T
j
T
j
T
j
T
j
150
160
170
190
°C
°C
°C
°C
5000 h
2500 h
500 h
4h
Storage temperature
T
S
– 40
150
°C
Thermal resistance
R
th JA
190
K/W
2)
Operating Range
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
Supply voltage
V
S
4.5
18
V
Junction temperature
T
j
– 40
190
°C
Pre-induction
B
0
– 500
500
mT
At Hall probe;
independent of
magnet
orientation
Differential induction
B
– 40
40
mT



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