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SE1230Q Datasheet(PDF) 6 Page - SiGe Semiconductor, Inc.

No. de pieza SE1230Q
Descripción Electrónicos  LightCharger??2.5 Gb/s Automatic Gain Control Amplifier Final
PDF  9 Pages
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Fabricante Electrónico  SIGE [SiGe Semiconductor, Inc.]
Página de inicio  http://www.sige.com
Logo SIGE - SiGe Semiconductor, Inc.

SE1230Q Datasheet(HTML) 6 Page - SiGe Semiconductor, Inc.

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SE1230Q
LightCharger
2.5 Gb/s Automatic Gain Control Amplifier
Final
AC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
BW (3dB)
Small Signal Bandwidth at –3dB point
2.0
GHz
Gain
Small Signal Gain (f = 100 MHz), differential input /
output
21
23.5
26
dB
Maximum Input Signal Level
200
Input Signal Level at AGC Threshold
(IAGC_ADJ =
0
µA) – note 2
25
Lower LOS Threshold (LOS = low)
5
8
Vin
Upper LOS Threshold (LOS = high)
12
18
mV pk
(differential)
Output AGC Signal Level (IAGC_ADJ = 0
µA) – note 3
250
370
500
Vout
Output AGC Signal Level (IAGC_ADJ = 150
µA) – note
3
80
170
300
mV pk
(differential)
S11
Input Reflection Coefficient (< 1.3 GHz)
–10
dB
S22
Output Reflection Coefficient (< 1.3 GHz)
–10
dB
NF
Noise Figure (diff. in / diff. out)
12
dB
tR / tF
Output Rise / Fall Time (Input rise / fall time = 20
ps)
120
ps
Note 2: Vin at AGC threshold is calculated by dividing Vout by the small signal gain.
Note 3: Measured at Vin = 100 mV pk , f = 100 MHz. For intermediate values of IAGC_ADJ the output
amplitude can be estimated by linear interpolation.
DC and AC electrical characteristics are specified over the recommended operating conditions, and with load resistor
(RL) of 50
Ω, AC coupled via 100 nF, for each output. All characteristics are specified for differential signals on inputs
and outputs.
49-DST-01 Rev 1.4 Apr 29/02
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